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Technical Article
氮化鎵功率器件的反向?qū)?/div>
Release date:2023-04-13
Writer:
Category:Technical Article
Views:576次
Ø
和硅
MOS
不同,氮化鎵器件沒(méi)有
PN
結(jié)
Ø
當(dāng)源極和門極接在一起
,
在
V
DS
上加一個(gè)負(fù)壓相當(dāng)于加一個(gè)正的
V
GD
Ø
當(dāng)
V
GD
超過(guò)閾值電壓,溝道會(huì)導(dǎo)通,類似于
MOS
管體二極管開(kāi)通。
Ø
門極上加負(fù)壓關(guān)斷,在方向開(kāi)通時(shí)漏極需要加上同樣的負(fù)壓,這樣會(huì)增加器件的損耗
Ø
如果需要氮化鎵反向續(xù)流同時(shí)門極負(fù)壓關(guān)斷:
1.
死區(qū)時(shí)間盡量短
2.
并聯(lián)快恢復(fù)二極管
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氮化鎵功率器件非理想硬開(kāi)關(guān)門極驅(qū)動(dòng)
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