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1. 目前主流的氮化鎵工藝仍然使用0.5 um特征尺寸和6寸或8寸外延晶圓
2. 就氮化鎵模擬IC而言，技術(shù)節(jié)點基本上相當(dāng)于20多年前的硅BCD工藝
3. 然而氮化鎵工藝不包含P-型HEMT，無論是高壓（650V）還是低壓（<20V）的HEMT管
4. 目前的GaN IC只能使用所謂的Direct-Coupled FET Logic (DCFL)，利用現(xiàn)有的E-mode和D-mode器件或者在模擬IC設(shè)計中，只用E-mode器件
5. 正如20年前的硅BCD工藝，氮化鎵模擬IC工藝也能提供低壓二極管，MIM電容及2DEG電阻等

Source: Kevin J. Chen, Oliver Häberlen, Alex Lidow, Chun lin Tsai, Tetsuzo Ueda, Yasuhiro Uemoto and Yifeng Wu, GaN-on-Si Power Technology:, Devices and Applications IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 3, MARCH 2017

Gaofei Tang1, M.-H. Kwan2, Zhaofu Zhang1, Jiabei He1, Jiacheng Lei1, R.-Y. Su2, F.-W. Yao2, Y.-M. Lin2, J.-L. Yu2, Thomas Yang2, Chan-Hong Chern2, Tom Tsai2, H. C. Tuan2, Alexander Kalnitsky2, and Kevin J. Chen1, High-Speed, High-Reliability GaN Power Device with Integrated Gate Driver; Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA